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AB - Sequential infiltration synthesis (SIS) is a process derived from ALD in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors. SIS can be used in lithography to harden polymer resists rendering them more robust towards subsequent etching, and this permits deeper and higher-resolution patterning of substrates such as silicon. Herein we describe recent investigations of a model system: Al2O3 SIS using trimethyl aluminum (TMA) and H2O within the diblock copolymer, poly(styrene-block-methyl methacrylate) (PS-b- PMMA). Combining in-situ Fourier transform infrared absorption spectroscopy, quartz-crystal microbalance, and synchrotron grazing incidence small angle X-ray scattering with high resolution scanning transmission electron microscope tomography, we elucidate important details of the SIS process: 1) TMA adsorption in PMMA occurs through a weakly-bound intermediate; 2) the SIS kinetics are diffusion-limited, with desorption 10x slower than adsorption; 3) dynamic structural changes occur during the individual precursor exposures. These findings have important implications for applications such as SIS lithography.

Sequential infiltration synthesis (SIS) is a method for growing inorganic materials within polymers in an atomically controlled fashion. This technique can increase the etch resistance of optical, electron-beam, and block copolymer (BCP) lithography resists and is also a flexible strategy for nanomaterials synthesis. Despite this broad utility, the kinetics of SIS remain poorly understood, and this knowledge gap must be bridged in order to gain firm control over the growth of inorganic materials inside polymer films at a large scale. In this paper, we explore the reaction kinetics for Al₂O₃ SIS in PMMA using in situ Fourier transform infrared spectroscopy. First, we establish the kinetics for saturation adsorption and desorption of trimethyl aluminum (TMA) in PMMA over a range of PMMA film thicknesses deposited on silicon substrates. These observations guide the selection of TMA dose and purge times during SIS lithography to achieve robust organic/inorganic structures. Next, we examine the effects of TMA desorption on BCP lithography by performing SIS on silicon surfaces coated with polystyrene--poly(methyl methacrylate) films. After etching the organic components, the substrates are examined using scanning electron microcopy to evaluate the resulting Al₂O₃ patterns. Finally, we examine the effects of temperature on Al₂O₃ SIS in PMMA to elucidate the infiltration kinetics. The insights provided by these measurements will help extend SIS lithography to larger substrate sizes for eventual commercialization and expand our knowledge of precursor–polymer interactions that will benefit the SIS of a wide range of inorganic materials in the future.

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Sequential infiltration synthesis (SIS) is a process derived from ALD in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors. SIS can be used in lithography to harden polymer resists rendering them more robust towards subsequent etching, and this permits deeper and higher-resolution patterning of substrates such as silicon. Herein we describe recent investigations of a model system: Al₂O₃ SIS using trimethyl aluminum (TMA) and H₂O within the diblock copolymer, poly(styrene-block-methyl methacrylate) (PS-b- PMMA). Combining in-situ Fourier transform infrared absorption spectroscopy, quartz-crystal microbalance, and synchrotron grazing incidence small angle X-ray scattering with high resolution scanning transmission electron microscope tomography, we elucidate important details of the SIS process: 1) TMA adsorption in PMMA occurs through a weakly-bound intermediate; 2) the SIS kinetics are diffusion-limited, with desorption 10x slower than adsorption; 3) dynamic structural changes occur during the individual precursor exposures. These findings have important implications for applications such as SIS lithography.

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N2 - Sequential infiltration synthesis (SIS) is a process derived from ALD in which a polymer is infused with inorganic material using sequential, self-limiting exposures to gaseous precursors. SIS can be used in lithography to harden polymer resists rendering them more robust towards subsequent etching, and this permits deeper and higher-resolution patterning of substrates such as silicon. Herein we describe recent investigations of a model system: Al2O3 SIS using trimethyl aluminum (TMA) and H2O within the diblock copolymer, poly(styrene-block-methyl methacrylate) (PS-b- PMMA). Combining in-situ Fourier transform infrared absorption spectroscopy, quartz-crystal microbalance, and synchrotron grazing incidence small angle X-ray scattering with high resolution scanning transmission electron microscope tomography, we elucidate important details of the SIS process: 1) TMA adsorption in PMMA occurs through a weakly-bound intermediate; 2) the SIS kinetics are diffusion-limited, with desorption 10x slower than adsorption; 3) dynamic structural changes occur during the individual precursor exposures. These findings have important implications for applications such as SIS lithography.